SI2343DS-T1-E3

VISHAY  SI2343DS-T1-E3  场效应管, MOSFET, P沟道, -30V, -4A

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

贸泽:
MOSFET 30V 4.0A 1.25W 53 mohms @ 10V

e络盟:
VISHAY  SI2343DS-T1-E3  场效应管, MOSFET, P沟道, -30V, 4A, TO-236

艾睿:
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R

富昌:
单 P 沟道 30 V 0.053 Ohms 表面贴装 功率 Mosfet - TO-236 SOT-23

Verical:
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2343DS-T1-E3  MOSFET Transistor, P Channel, -4 A, -30 V, 53 mohm, -10 V, -3 V

力源芯城:
-30V,-4A,P沟道功率MOSFET