SIB433EDK-T1-GE3概述
VISHAY SIB433EDK-T1-GE3 晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV
The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and charger switch applications.
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- New thermally enhanced PowerPAK® package
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- Small footprint area
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- Low ON-resistance
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- 100% Rg tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
SIB433EDK-T1-GE3中文资料参数规格
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型号： SIB433EDK-T1-GE3
描述：VISHAY SIB433EDK-T1-GE3 晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV