VISHAY SI7898DP-T1-E3 晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V 新
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
艾睿:
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
安富利:
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
富昌:
单 N 沟道 150 V 0.085 Ohms 表面贴装 功率 Mosfet - PowerPAK-SO-8
Verical:
Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R
Newark:
# VISHAY SI7898DP-T1-E3 MOSFET Transistor, N Channel, 4.8 A, 150 V, 95 mohm, 20 V, 4 V
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SI7898DP-T1-E3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFH5215TRPBF 英飞凌 | 功能相似 | SI7898DP-T1-E3和IRFH5215TRPBF的区别 |
SI7898DP-T1-GE3 威世 | 功能相似 | SI7898DP-T1-E3和SI7898DP-T1-GE3的区别 |