VISHAY SIR440DP-T1-GE3 场效应管, MOSFET, N通道, 20V, 60A POWERPAK, 整卷
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for fixed telecom, high current DC-to-DC and O-ring applications.
针脚数 8
漏源极电阻 0.00125 Ω
极性 N-Channel
耗散功率 104 W
阈值电压 2.5 V
漏源极电压Vds 20 V
连续漏极电流Ids 60.0 A
工作温度Max 150 ℃
引脚数 8
封装 PowerPAK SO
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
数据手册