SI4465ADY-T1-E3

VISHAY  SI4465ADY-T1-E3  晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V

The is a 1.8VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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100% Rg tested

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-55 to 150°C Operating temperature range

贸泽:
MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V

艾睿:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R

安富利:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R

富昌:
单通道 P 沟道 8 V 0.009 Ohm 表面贴装 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4465ADY-T1-E3  MOSFET Transistor, P Channel, -13.7 A, -8 V, 0.0075 ohm, 8 V, -0.45 V