SI4401BDY-T1-GE3

VISHAY  SI4401BDY-T1-GE3.  场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC

The is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R

安富利:
Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R

富昌:
Si4401BDY 系列 40 V 10.5 A 14 mOhm 表面贴装 P 沟道 MOSFET - SOIC-8