SIE822DF-T1-GE3

SIE822DF-T1-GE3图片1
SIE822DF-T1-GE3中文资料参数规格
封装参数

封装 PolarPAK-10

外形尺寸

封装 PolarPAK-10

其他

Packaging Reel

Part-Aliases SIE822DF-GE3

Mounting-Style SMD/SMT

Package-Case PolarPAK-10

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 5.2 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Vgs-Gate-Source-Voltage 20 V

Id-Continuous-Drain-Current 31 A

Vds-Drain-Source-Breakdown-Voltage 20 V

Rds-On-Drain-Source-Resistance 3.4 mOhms

Transistor-Polarity N-Channel

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买SIE822DF-T1-GE3
型号: SIE822DF-T1-GE3
描述:N通道20 -V (D -S )的MOSFET N-Channel 20-V D-S MOSFET

锐单商城 - 一站式电子元器件采购平台