VISHAY SIHA12N60E-E3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, PFC power supplies, adaptors, TV, game console and ATX power supply applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
针脚数 3
漏源极电阻 0.32 Ω
极性 N-Channel
耗散功率 33 W
阈值电压 4 V
漏源极电压Vds 600 V
上升时间 19 ns
输入电容Ciss 937pF @100VVds
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 33000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220
高度 15.3 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Lighting, Consumer Electronics, Computers & Computer Peripherals, Power Management, Communications & Networking, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHA12N60E-E3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SPA11N60C3XKSA1 英飞凌 | 功能相似 | SIHA12N60E-E3和SPA11N60C3XKSA1的区别 |
SPA11N60C3 英飞凌 | 功能相似 | SIHA12N60E-E3和SPA11N60C3的区别 |