SIHB22N60S-E3概述
VISHAY SIHB22N60S-E3 功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for PFC power supply stages, hard switching topologies, solar inverters, UPS, motor control and server telecom applications.
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- Generation one
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- High EAR capability
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- Lower figure-of-merit RON x Qg
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- 100% Avalanche tested
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- Ultra low RON
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- dV/dt Ruggedness
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- Ultra low gate charge
SIHB22N60S-E3中文资料参数规格
技术参数
针脚数 3
漏源极电阻 160 mΩ
极性 N-Channel
耗散功率 250 W
阈值电压 2 V
漏源极电压Vds 600 V
连续漏极电流Ids 22.0 A
工作温度Max 150 ℃
封装参数
引脚数 3
封装 TO-263
外形尺寸
封装 TO-263
其他
包装方式 Tube
制造应用 Alternative Energy, Industrial, Motor Drive & Control, Lighting, Communications & Networking, Power Management
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买SIHB22N60S-E3
型号： SIHB22N60S-E3
描述：VISHAY SIHB22N60S-E3 功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V