VISHAY SI7540DP-T1-E3 双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
The is a dual N/P-channel MOSFET housed in a surface-mount package. It is suitable for point-of-load synchronous rectifier, synchronous buck and shoot-thru resistant applications.
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- TrenchFET® power MOSFET
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- 100% Rg tested
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- PWM Optimized for high efficiency
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- New low thermal resistance PowerPAK® package with low 1.07mm profile
针脚数 8
漏源极电阻 0.017 Ω
极性 N-Channel, P-Channel
耗散功率 3.5 W
阈值电压 1.5 V
漏源极电压Vds 12 V
漏源击穿电压 12.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 11.8 A
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC
封装 SOIC
包装方式 Cut Tape CT
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI7540DP-T1-E3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI7540DP-T1-GE3 威世 | 功能相似 | SI7540DP-T1-E3和SI7540DP-T1-GE3的区别 |