SI4816BDY-T1-GE3

VISHAY  SI4816BDY-T1-GE3.  场效应管, MOSFET, 双N沟道, 30V, SOIC

The is a dual N-channel MOSFET with Schottky diode housed in a surface-mount package.

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Halogen-free

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LITTLE FOOT® Plus power MOSFET

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100% Rg tested

e络盟:
VISHAY  SI4816BDY-T1-GE3.  场效应管, MOSFET, 双N沟道, 30V, SOIC

艾睿:
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

安富利:
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

富昌:
双 N沟道 30 V 0.0185/0.0115 Ω 10 nC 表面贴装 功率 Mosfet - SOIC-8

Chip1Stop:
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

Verical:
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4816BDY-T1-GE3  Dual MOSFET, Dual N Channel, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V

儒卓力:
**DUAL 30V 6,8A 18,5mOhm SO-8 **

力源芯城:
30V,5.8A,8.2A,带肖特基二极管双N沟道MOSFET