INFINEON SPA20N60C3 功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
The is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
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- Very low energy storage in output capacitance Eoss at 400V
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- Low gate charge Qg
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- High efficiency and power density
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- Outstanding performance
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- High reliability
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- Easy to use
额定电压DC 650 V
额定电流 20.7 A
通道数 1
针脚数 3
漏源极电阻 0.16 Ω
极性 N-Channel
耗散功率 34.5 W
阈值电压 3 V
输入电容 2.40 nF
栅电荷 114 nC
漏源极电压Vds 650 V
连续漏极电流Ids 20.7 A
上升时间 5 ns
下降时间 4.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 34.5W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.65 mm
宽度 4.85 mm
高度 16.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Not Recommended
包装方式 Tube
制造应用 Power Management, Consumer Electronics, Computers & Computer Peripherals, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SPA20N60C3 Infineon 英飞凌 | 当前型号 | 当前型号 |
SPA08N80C3 英飞凌 | 类似代替 | SPA20N60C3和SPA08N80C3的区别 |
SPA11N80C3 英飞凌 | 类似代替 | SPA20N60C3和SPA11N80C3的区别 |
SPA04N60C3 英飞凌 | 类似代替 | SPA20N60C3和SPA04N60C3的区别 |