N沟道30V - 0.0035 W¯¯ - 80A D2PAK / I2PAK / TO- 220的STripFET ™II功率MOSFET N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET
通孔 N 通道 30 V 80A(Tc) 300W(Tc) I2PAK
得捷:
MOSFET N-CH 30V 80A I2PAK
艾睿:
Create an effective common drain amplifier using this STB80NF03L-04-1 power MOSFET from STMicroelectronics. Its maximum power dissipation is 300000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -60 °C and a maximum of 175 °C.
Chip1Stop:
Trans MOSFET N-CH 30V 80A 3-Pin3+Tab I2PAK Tube
DeviceMart:
MOSFET N-CH 30V 80A I2PAK
Win Source:
MOSFET N-CH 30V 80A I2PAK
耗散功率 300W Tc
漏源极电压Vds 30 V
上升时间 270 ns
输入电容Ciss 5500pF @25VVds
额定功率Max 300 W
下降时间 95 ns
工作温度Max 175 ℃
工作温度Min -60 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-262-3
封装 TO-262-3
工作温度 -60℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB80NF03L-04-1 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB100NF03L-03-1 意法半导体 | 类似代替 | STB80NF03L-04-1和STB100NF03L-03-1的区别 |
IRL3103 英飞凌 | 功能相似 | STB80NF03L-04-1和IRL3103的区别 |