N沟道30V - 0.012ohm - 8A - PowerFLAT超低栅极电荷的STripFET功率MOSFET N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET
N-Channel 30V 8A Tc 2W Ta, 50W Tc Surface Mount PowerFlat™ 3.3x3.3
得捷:
MOSFET N-CH 30V 8A POWERFLAT
贸泽:
MOSFET N-Ch 30 Volt 8 Amp
艾睿:
Compared to traditional transistors, STL8NH3LL power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 30V 8A 8-Pin Power Flat T/R
Win Source:
MOSFET N-CH 30V 8A PWRFLAT3.3SQ
额定电压DC 30.0 V
额定电流 8.00 A
通道数 1
漏源极电阻 15 mΩ
极性 N-Channel
耗散功率 2 W
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±18.0 V
连续漏极电流Ids 8.00 A
上升时间 32 ns
输入电容Ciss 965pF @25VVds
额定功率Max 2 W
下降时间 8.5 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2W Ta, 50W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-8
长度 5 mm
宽度 6 mm
高度 0.81 mm
封装 PowerFLAT-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STL8NH3LL ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STL9N3LLH5 意法半导体 | 功能相似 | STL8NH3LL和STL9N3LLH5的区别 |