STL15N60M2-EP

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STL15N60M2-EP概述

Power N-CH 600V 7A

N-Channel 600V 7A Tc 55W Tc Surface Mount PowerFlat™ 5x6 HV


得捷:
MOSFET N-CH 600V 7A POWERFLAT HV


贸泽:
MOSFET


艾睿:
Compared to traditional transistors, STL15N60M2-EP power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 55000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes mdmesh m2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


富昌:
N-沟道 600 V 0.418 Ohm 表面贴装 MDmesh™ M2 EP 功率 MOSFET-PowerFLAT 5x6


Verical:
Trans MOSFET N-CH 600V 7A 8-Pin Power Flat EP T/R


STL15N60M2-EP中文资料参数规格
技术参数

通道数 1

漏源极电阻 418 mΩ

极性 N-CH

耗散功率 55 W

阈值电压 2 V

漏源极电压Vds 600 V

漏源击穿电压 600 V

连续漏极电流Ids 7A

上升时间 10 ns

输入电容Ciss 590pF @100VVds

下降时间 15 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 55W Tc

封装参数

安装方式 Surface Mount

引脚数 8

封装 PowerFLAT-5x6-HV-8

外形尺寸

封装 PowerFLAT-5x6-HV-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STL15N60M2-EP
型号: STL15N60M2-EP
描述:Power N-CH 600V 7A

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