



Power N-CH 600V 7A
N-Channel 600V 7A Tc 55W Tc Surface Mount PowerFlat™ 5x6 HV
得捷:
MOSFET N-CH 600V 7A POWERFLAT HV
贸泽:
MOSFET
艾睿:
Compared to traditional transistors, STL15N60M2-EP power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 55000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes mdmesh m2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
富昌:
N-沟道 600 V 0.418 Ohm 表面贴装 MDmesh™ M2 EP 功率 MOSFET-PowerFLAT 5x6
Verical:
Trans MOSFET N-CH 600V 7A 8-Pin Power Flat EP T/R
通道数 1
漏源极电阻 418 mΩ
极性 N-CH
耗散功率 55 W
阈值电压 2 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 7A
上升时间 10 ns
输入电容Ciss 590pF @100VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 55W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-5x6-HV-8
封装 PowerFLAT-5x6-HV-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free