N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N CH 800V 6A TO220
立创商城:
N沟道 800V 6A
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STP8N80K5, 6 A, Vds=800 V, 3引脚 TO-220封装
贸泽:
MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5
e络盟:
晶体管, MOSFET, N沟道, 6 A, 800 V, 0.8 ohm, 10 V, 4 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STP8N80K5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 800V 6A 3-Pin3+Tab TO-220 Tube
富昌:
N-Channel 800 V 0.95 Ohm Flange Mount SuperMESH™5 Power Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 800V 6A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 800V 6A 3-Pin3+Tab TO-220AB Tube
针脚数 3
漏源极电阻 0.8 Ω
极性 N-CH
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 800 V
连续漏极电流Ids 6A
上升时间 14 ns
输入电容Ciss 450pF @100VVds
额定功率Max 110 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP8N80K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STU8N80K5 意法半导体 | 完全替代 | STP8N80K5和STU8N80K5的区别 |
STD8N80K5 意法半导体 | 功能相似 | STP8N80K5和STD8N80K5的区别 |