STF4N52K3

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STF4N52K3概述

N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics

N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics


得捷:
MOSFET N-CH 525V 2.5A TO220FP


欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STF4N52K3, 2.5 A, Vds=525 V, 3引脚


贸泽:
MOSFET N-ch 525 V 2.5 A 2.1 Ohm SuperMESH3


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STF4N52K3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET N-CH 525V 2.5A 3-Pin3+Tab TO-220FP Tube


力源芯城:
525V,2.1Ω,2.5A,N沟道功率MOSFET


Win Source:
MOSFET N-CH 525V 2.5A TO-220FP


STF4N52K3中文资料参数规格
技术参数

漏源极电阻 2.1 Ω

极性 N-Channel

耗散功率 20 W

阈值电压 3.75 V

漏源极电压Vds 525 V

连续漏极电流Ids 2.5A

上升时间 7 ns

输入电容Ciss 334pF @100VVds

额定功率Max 45 W

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 20W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 7 mm

宽度 6.6 mm

高度 2.4 mm

封装 TO-220-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STF4N52K3
型号: STF4N52K3
描述:N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
替代型号STF4N52K3
型号/品牌 代替类型 替代型号对比

STF4N52K3

ST Microelectronics 意法半导体

当前型号

当前型号

STF2N62K3

意法半导体

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STF4N52K3和STF2N62K3的区别

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