DPAK N-CH 80V 80A
N-Channel 80V 80A Tc 167W Tc Surface Mount DPAK
立创商城:
STD110N8F6
得捷:
MOSFET N-CH 80V 80A DPAK
贸泽:
MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
艾睿:
This STD110N8F6 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 167000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet f6 technology.
安富利:
Trans MOSFET N-CH 80V 80A 3-Pin DPAK T/R
Verical:
Trans MOSFET N-CH 80V 80A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 80V 80A DPAK
极性 N-CH
耗散功率 167 W
漏源极电压Vds 80 V
连续漏极电流Ids 80A
上升时间 61 ns
输入电容Ciss 9130pF @40VVds
下降时间 48 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 167W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 10.1 mm
宽度 6.6 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅