STW40N60M2 系列 600 V 0.088 Ohm 法兰安装 N 沟道 功率 Mosfet - TO-247
Looking for a component that can both amplify and switch between signals within your circuit? The power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 250000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
通道数 1
漏源极电阻 88 mΩ
极性 N-CH
耗散功率 250 W
阈值电压 3 V
漏源极电压Vds 600 V
漏源击穿电压 650 V
连续漏极电流Ids 34A
上升时间 13.5 ns
输入电容Ciss 2500pF @100VVds
额定功率Max 250 W
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 250W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99