










N 通道 STripFET™,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™,STMicroelectronics
得捷:
MOSFET N-CH 55V 120A TO220AB
欧时:
STMicroelectronics STripFET 系列 N沟道 MOSFET 晶体管 STP180N55F3, 120 A, Vds=55 V, 3引脚 TO-220封装
贸泽:
MOSFET N Ch 600V 6A Hyper fast IGBT
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STP180N55F3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 330000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 55V 120A 3-Pin3+Tab TO-220 Tube
Win Source:
MOSFET N-CH 55V 120A TO-220
通道数 1
漏源极电阻 0.0032 Ω
极性 N-Channel
耗散功率 330 W
阈值电压 4 V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 60.0 A
上升时间 150 ns
输入电容Ciss 6800pF @25VVds
额定功率Max 330 W
下降时间 50 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 330W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP180N55F3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP185N55F3 意法半导体 | 类似代替 | STP180N55F3和STP185N55F3的区别 |
SQM120N06-04L-GE3 Vishay Siliconix | 类似代替 | STP180N55F3和SQM120N06-04L-GE3的区别 |
STB185N55F3 意法半导体 | 功能相似 | STP180N55F3和STB185N55F3的区别 |