Trans MOSFET N-CH 650V 12.5A 5Pin4+Tab Power Flat T/R
Create an effective common drain amplifier using this power MOSFET from STMicroelectronics. Its maximum power dissipation is 2800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
耗散功率 2.8 W
漏源极电压Vds 650 V
上升时间 7 ns
输入电容Ciss 1240pF @100VVds
额定功率Max 2.8 W
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.8W Ta, 90W Tc
安装方式 Surface Mount
引脚数 5
封装 PowerFLAT-8x8-HV-5
封装 PowerFLAT-8x8-HV-5
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free