STMICROELECTRONICS STL26NM60N 功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V
The is a MDmesh™ II N-channel Power MOSFET features ultra low gate charge. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
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- Low input capacitance and gate charge
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- Low gate input resistance
针脚数 5
漏源极电阻 0.16 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 4 V
漏源极电压Vds 600 V
连续漏极电流Ids 19A
上升时间 25 ns
输入电容Ciss 1800pF @50VVds
额定功率Max 125 mW
下降时间 50 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125mW Ta, 3W Tc
安装方式 Surface Mount
引脚数 5
封装 PowerFlat-4
封装 PowerFlat-4
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STL26NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB24NM65N 意法半导体 | 功能相似 | STL26NM60N和STB24NM65N的区别 |