STMICROELECTRONICS STP11N65M2 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
通孔 N 通道 650 V 7A(Tc) 85W(Tc) TO-220
得捷:
MOSFET N-CH 650V 7A TO220
e络盟:
晶体管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
艾睿:
Create an effective common drain amplifier using this STP11N65M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii plus technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube
Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab TO-220AB Tube
儒卓力:
**N-CH 650V 7A 680mOhm TO220 **
针脚数 3
漏源极电阻 0.6 Ω
极性 N-Channel
耗散功率 85 W
阈值电压 3 V
漏源极电压Vds 650 V
连续漏极电流Ids 7A
上升时间 7.5 ns
输入电容Ciss 410pF @100VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 85W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 无铅
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99