STGB6NC60HD 系列 600 V 15 A N 沟道 极快速 PowerMESH IGBT - D2PAK
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 600 V
额定电流 15.0 A
极性 N-Channel
耗散功率 62500 mW
上升时间 5.00 ns
击穿电压集电极-发射极 600 V
反向恢复时间 21 ns
额定功率Max 56 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 62500 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
宽度 9.35 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99