N-沟道 100 V 5 A 67 mOhm STripFET VII DeepGATE 功率 Mosfet - PFLAT5x6
Mosfet Array 2 N-Channel Dual 100V 20A 62.5W Surface Mount PowerFlat™ 5x6
得捷:
MOSFET 2N-CH 100V 20A PWRFLAT56
贸泽:
MOSFET Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STL20DN10F7 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 62500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 100V 20A 8-Pin PowerFLAT T/R
富昌:
N-Channel 100 V 5 A 67 mOhm STripFET VII DeepGATE Power Mosfet - PFLAT5x6
Chip1Stop:
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R
Verical:
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R
极性 N-CH
耗散功率 62.5 W
漏源极电压Vds 100 V
连续漏极电流Ids 20A
上升时间 3 ns
输入电容Ciss 408pF @50VVds
额定功率Max 62.5 W
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 62500 mW
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-5x6-8
长度 5.2 mm
封装 PowerFLAT-5x6-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free