N沟道30 V - 0.0032 Ω - 25 A - PowerFLAT ™ （引脚6x5 ）的STripFET ™III功率MOSFET N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT™ 6x5 STripFET™ III Power MOSFET
N-Channel 30V 100A Tc 80W Tc Surface Mount PowerFlat™ 5x6
得捷:
MOSFET N-CH 30V 100A PWRFLAT6X5
贸泽:
MOSFET STRIPFET III
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STL100NH3LL power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 80000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet iii technology.
Win Source:
MOSFET N-CH 30V 100A PWRFLAT6X5
额定电压DC 30.0 V
额定电流 100 A
通道数 1
漏源极电阻 0.0032 Ω
极性 N-Channel
耗散功率 80 W
阈值电压 2.5 V
输入电容 4.45 nF
栅电荷 40.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 100 A
上升时间 50 ns
输入电容Ciss 4450pF @25VVds
额定功率Max 4 W
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 80W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-5x6-8
长度 5 mm
宽度 6 mm
高度 0.81 mm
封装 PowerFLAT-5x6-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STL100NH3LL ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STL140N4LLF5 意法半导体 | 类似代替 | STL100NH3LL和STL140N4LLF5的区别 |
STL60N3LLH5 意法半导体 | 类似代替 | STL100NH3LL和STL60N3LLH5的区别 |
BSC080N03LSGATMA1 英飞凌 | 功能相似 | STL100NH3LL和BSC080N03LSGATMA1的区别 |