STB12NM60N

N沟道600V - 0.35ヘ - 10A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET

表面贴装型 N 通道 10A（Tc） 90W（Tc） D2PAK

得捷:
MOSFET N-CH 600V 10A D2PAK

艾睿:
This STB12NM60N power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 600V 10A D2PAK