SO N-CH 30V 13A
This power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 2700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
极性 N-CH
耗散功率 2.7 W
漏源极电压Vds 30 V
连续漏极电流Ids 13A
上升时间 14.5 ns
输入电容Ciss 1500pF @25VVds
额定功率Max 2.7 W
下降时间 4.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.7W Tc
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS13N3LLH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
AP4424GM-HF 富鼎先进电子 | 功能相似 | STS13N3LLH5和AP4424GM-HF的区别 |
AP4224GM-HF 富鼎先进电子 | 功能相似 | STS13N3LLH5和AP4224GM-HF的区别 |