







N沟道600V - 0.53欧姆 - 10A TO- 220 / TO- 220FP齐纳保护SuperMESH⑩MOSFET N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH⑩MOSFET
N-Channel 600V 10A Tc 35W Tc Through Hole TO-220FP
立创商城:
STF12NK60Z
得捷:
MOSFET N-CH 600V 10A TO220FP
艾睿:
Make an effective common gate amplifier using this STF12NK60Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 35000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-220FP Tube
富昌:
STF12NK60Z系列 N沟道 650 V 0.64 Ohm SuperMESH™ 功率MOSFET - TO-220FP
Chip1Stop:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-220FP Tube
Win Source:
MOSFET N-CH 600V 10A TO220FP
额定电压DC 600 V
额定电流 10.0 A
漏源极电阻 640 mΩ
极性 N-Channel
耗散功率 35W Tc
输入电容 1.74 nF
栅电荷 59.0 nC
漏源极电压Vds 600 V
漏源击穿电压 650 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 10.0 A
上升时间 18.5 ns
输入电容Ciss 1740pF @25VVds
额定功率Max 35 W
下降时间 31.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 35W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STF12NK60Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STF10NM60N 意法半导体 | 类似代替 | STF12NK60Z和STF10NM60N的区别 |
STF11NM50N 意法半导体 | 类似代替 | STF12NK60Z和STF11NM50N的区别 |
STF19NM50N 意法半导体 | 类似代替 | STF12NK60Z和STF19NM50N的区别 |