STMICROELECTRONICS ST13009 单晶体管 双极, NPN, 400 V, 100 W, 12 A, 10 hFE
The is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
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- Low spread of dynamic parameters
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- High voltage capability
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- Minimum lot-to-lot spread for reliable operation
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- Very high switching speed
额定电压DC 900 V
额定电流 12.0 A
针脚数 3
极性 NPN
耗散功率 100 W
击穿电压集电极-发射极 400 V
集电极最大允许电流 12A
最小电流放大倍数hFE 10 @8A, 5V
额定功率Max 100 W
直流电流增益hFE 10
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 100000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电源管理, 工业, Industrial
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ST13009 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FJP13009H2TU 飞兆/仙童 | 功能相似 | ST13009和FJP13009H2TU的区别 |
MJE13009G 安森美 | 功能相似 | ST13009和MJE13009G的区别 |