












N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics
得捷:
MOSFET N-CH 600V 23A TO220
欧时:
### N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-channel 600 V 0 120 Ohm typ 24 A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STP28NM60ND power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 19000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes fdmesh technology.
安富利:
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
富昌:
单 N沟道 650 V 0.15 Ω 190 W 法兰安装 功率 Mosfet - TO-220-3
Verical:
Trans MOSFET N-CH 600V 23A 3-Pin3+Tab TO-220AB Tube
Win Source:
MOSFET N-CH 600V 23A TO220
耗散功率 190 W
输入电容 2090 pF
漏源极电压Vds 600 V
上升时间 21.5 ns
输入电容Ciss 2090pF @100VVds
额定功率Max 190 W
下降时间 27 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free