TK12E60W,S1VXS

MOSFET DTMOS IV 系列，Toshiba### MOSFET 晶体管，Toshiba

MOSFET ，

欧时:
Toshiba TK 系列 Si N沟道 MOSFET TK12E60W,S1VXS, 11.5 A, Vds=600 V, 3引脚 TO-220SIS封装

艾睿:
If you need to either amplify or switch between signals in your design, then Toshiba&s;s TK12E60W,S1VXS power MOSFET is for you. Its maximum power dissipation is 110000 mW. This device utilizes dtmosiv technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH Si 600V 11.5A 3-Pin3+Tab TO-220

儒卓力:
**N-CH 600V 11,5A 0,3mOhm TO220-3 **