2输入AND高速MOSFET驱动器,一路同相,一路反
低端 栅极驱动器 IC 反相,非反相 8-SOIC
得捷:
IC GATE DRVR LOW-SIDE 8SOIC
立创商城:
低边 MOSFET 灌:2A 拉:2A
德州仪器TI:
2-A/2-A dual-channel gate driver with two AND inputs for each output
贸泽:
Gate Drivers One Inv One Non-inv MOSFET Driver
艾睿:
If you are working with high voltage transistors, implement this TPS2814DR power driver from Texas Instruments to switch states. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 730 mW. Its maximum power dissipation is 730 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
安富利:
MOSFET DRVR 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
Verical:
Driver 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
Newark:
# TEXAS INSTRUMENTS TPS2814DR MOSFET Driver, 2 outputs, High Side, 4V-14V supply, 2A output, SOIC-8
力源芯城:
2输入AND高速MOSFET驱动器,一路同相,一路反
Win Source:
IC DUAL HS MOSFET DRVR 8-SOIC
电源电压DC 4.00V min
上升/下降时间 14ns, 15ns
输出接口数 2
输出电流 2 A
耗散功率 730 mW
上升时间 14 ns
下降时间 15 ns
下降时间Max 35 ns
上升时间Max 35 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 730 mW
电源电压 4V ~ 14V
电源电压Max 14 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TA
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TPS2814DR TI 德州仪器 | 当前型号 | 当前型号 |
TPS2814D 德州仪器 | 类似代替 | TPS2814DR和TPS2814D的区别 |
TPS2814DG4 德州仪器 | 类似代替 | TPS2814DR和TPS2814DG4的区别 |
TPS2814DRG4 德州仪器 | 类似代替 | TPS2814DR和TPS2814DRG4的区别 |