VNS1NV04DPTR-E

STMICROELECTRONICS  VNS1NV04DPTR-E  晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV

The is a 40V Fully Auto Protected Power MOSFET formed by two monolithic OMNIFET II chips. The OMNIFET II is designed in VIPower™ M0-3 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

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Linear current limitation

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Thermal shutdown

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Short-circuit protection

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Integrated clamp

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Low current drawn from input pin

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Diagnostic feedback through input pin

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ESD protection

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Direct access to the gate of the power MOSFET analogue driving

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Compatible with standard power MOSFET

ESD sensitive device, take proper precaution while handling the device.