VNB14NV04 单通道 低边 自保护 45 V 24 A 35 mOhm 功率MOSFET - D2PAK
Description
The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET analog driving
■ Compatible with standard Power MOSFET
输出接口数 1
输出电流 24 A
供电电流 0.1 mA
针脚数 3
极性 N-Channel
耗散功率 74 W
漏源击穿电压 42.0 V
连续漏极电流Ids 14.0 A
上升时间 30 µs
输出电流Max 12 A
输出电流Min 12 A
输入数 1
下降时间 30 µs
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 74000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VNB14NV04TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VNB14NV04-E 意法半导体 | 类似代替 | VNB14NV04TR-E和VNB14NV04-E的区别 |
VNB14NV04 意法半导体 | 类似代替 | VNB14NV04TR-E和VNB14NV04的区别 |
VNB14NV0413TR 意法半导体 | 类似代替 | VNB14NV04TR-E和VNB14NV0413TR的区别 |