VNB20N07

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VNB20N07概述

? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION

The VNP20N07FI, and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

■ LINEAR CURRENT LIMITATION

■ THERMAL SHUT DOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET ANALOG DRIVING

■ COMPATIBLE WITH STANDARD POWER MOSFET

VNB20N07中文资料参数规格
技术参数

额定电压DC 70.0 V

额定电流 20.0 A

输出接口数 1

漏源极电阻 50.0 mΩ

极性 N-Channel

耗散功率 83.0 W

漏源击穿电压 70.0 V

连续漏极电流Ids 10.0 A

输出电流Max 14 A

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

数据手册

在线购买VNB20N07
型号: VNB20N07
描述:? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
替代型号VNB20N07
型号/品牌 代替类型 替代型号对比

VNB20N07

ST Microelectronics 意法半导体

当前型号

当前型号

VNB20N07-E

意法半导体

类似代替

VNB20N07和VNB20N07-E的区别

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