DIODES INC. ZXMN6A08E6 晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 1 V
The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- .
- Low ON-resistance
- .
- Fast switching speed
- .
- Low threshold
- .
- Low gate drive
- .
- Green device
- .
- Qualified to AEC-Q101 standards for high reliability
- .
- Moisture sensitivity level 1 as per J-STD-020
- .
- UL94V-0 Flammability rating
针脚数 6
漏源极电阻 0.1 Ω
极性 N-Channel
耗散功率 1.7 W
阈值电压 1 V
漏源极电压Vds 60 V
连续漏极电流Ids 3.00 A
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 6
封装 SOT-23
封装 SOT-23
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Aerospace, Automotive, Power Management, Defence, Military, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZXMN6A08E6 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
ZXMN10A08E6 威世 | 类似代替 | ZXMN6A08E6和ZXMN10A08E6的区别 |