Trans MOSFET N-CH 60V 5.3A Automotive 4Pin3+Tab SOT-223 T/R
表面贴装型 N 通道 60 V 3.8A（Ta） 2W（Ta） SOT-223
得捷:
MOSFET N-CH 60V 3.8A SOT223
贸泽:
MOSFET 60V 3.8A N-Channel MOSFET
艾睿:
This ZXMN6A08GTA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET N-Channel 60V 5.3A SOT223
安富利:
Trans MOSFET N-CH 60V 5.3A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans MOSFET N-CH 60V 5.3A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans MOSFET N-CH 60V 3.8A 4-Pin3+Tab SOT-223 T/R
Win Source:
MOSFET N-CH 60V 3.8A SOT223
DeviceMart:
MOSFET N-CH 60V 3.8A SOT223
额定电压DC 60.0 V
额定电流 2.50 A
通道数 1
漏源极电阻 80 mΩ
极性 N-CH
耗散功率 3.9 W
输入电容 459 pF
栅电荷 4.00 nC
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 530 mA
上升时间 2.1 ns
输入电容Ciss 459pF @40VVds
额定功率Max 2 W
下降时间 4.6 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2W Ta
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC