MOSFET N-CH 30V 18.4A DPAK
SUMMARY
VBRDSS=30V : RDSon=0.02 ; ID=18.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK TO252 package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
额定电压DC 30.0 V
额定电流 18.4 A
漏源极电阻 30.0 mΩ
极性 N-Channel
耗散功率 10.1 W
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 18.4 A
上升时间 6.1 ns
输入电容Ciss 1890pF @15VVds
额定功率Max 2.15 W
下降时间 20.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 10100 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC