ZXM61P02F

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ZXM61P02F概述

DIODES INC.  ZXM61P02F  晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV

The is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish terminals as per MIL-STD-202 standard. It utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

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Low threshold
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Low gate drive
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Halogen-free, Green device
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Qualified to AEC-Q101 standards for high reliability
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Moisture sensitivity level 1 as per J-STD-020
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UL94V-0 Flammability rating
ZXM61P02F中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.6 Ω

极性 P-Channel

耗散功率 625 mW

阈值电压 700 mV

漏源极电压Vds 20 V

连续漏极电流Ids 900 mA

工作温度Max 150 ℃

封装参数

引脚数 3

封装 SOT-23

外形尺寸

封装 SOT-23

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 电源管理, 国防, 军用与航空, 车用, 电机驱动与控制

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

军工级 Yes

REACH SVHC版本 2015/12/17

数据手册

在线购买ZXM61P02F
型号: ZXM61P02F
制造商: Diodes 美台
描述:DIODES INC.  ZXM61P02F  晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
替代型号ZXM61P02F
型号/品牌 代替类型 替代型号对比

ZXM61P02F

Diodes 美台

当前型号

当前型号

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