ZVNL120GTA

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ZVNL120GTA概述

N沟道 200V 320mA

N-Channel 200V 320mA Ta 2W Ta Surface Mount SOT-223


得捷:
MOSFET N-CH 200V 320MA SOT223


立创商城:
N沟道 200V 320mA


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the ZVNL120GTA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 200V 0.32A 4-Pin3+Tab SOT-223 T/R


富昌:
ZVNL120G 系列 200V 10 Ohm N-沟道 增强模式 垂直 DMOS FET-SOT-223


Verical:
Trans MOSFET N-CH 200V 0.32A Automotive 4-Pin3+Tab SOT-223 T/R


Win Source:
MOSFET N-CH 200V 320MA SOT223


DeviceMart:
MOSFET N-CH 200V 320MA SOT223


ZVNL120GTA中文资料参数规格
技术参数

额定电压DC 200 V

额定电流 320 mA

漏源极电阻 10.0 Ω

极性 N-Channel

耗散功率 2 W

输入电容 85.0 pF

漏源极电压Vds 200 V

漏源击穿电压 200 V

栅源击穿电压 ±20.0 V

连续漏极电流Ids 320 mA

上升时间 8 ns

输入电容Ciss 85pF @25VVds

额定功率Max 2 W

下降时间 12 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2000 mW

封装参数

安装方式 Surface Mount

引脚数 4

封装 TO-261-4

外形尺寸

封装 TO-261-4

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买ZVNL120GTA
型号: ZVNL120GTA
制造商: Diodes 美台
描述:N沟道 200V 320mA
替代型号ZVNL120GTA
型号/品牌 代替类型 替代型号对比

ZVNL120GTA

Diodes 美台

当前型号

当前型号

ZVNL120GTC

美台

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