IXFK80N50P 系列 500 V 65 mOhm N 沟道 增强模式 功率 MOSFET
This power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
额定电压DC 500 V
额定电流 80.0 A
漏源极电阻 65.0 mΩ
极性 N-Channel
耗散功率 1040 W
输入电容 1.28 nF
栅电荷 197 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 80.0 A
上升时间 27 ns
输入电容Ciss 12700pF @25VVds
下降时间 16 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1040W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
长度 19.96 mm
宽度 5.13 mm
高度 26.16 mm
封装 TO-264-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFK80N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFX80N50P IXYS Semiconductor | 功能相似 | IXFK80N50P和IXFX80N50P的区别 |
APT50M50L2LLG 美高森美 | 功能相似 | IXFK80N50P和APT50M50L2LLG的区别 |