NXP PMF370XN,115 晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
The is a N-channel enhancement-mode extremely low level FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in driver circuits and switching in portable appliances applications.
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- Low conduction losses due to low ON-state resistance
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- Low threshold voltage
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- Saves PCB space due to small footprint 40% smaller than SOT23
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- Suitable for low gate drive sources
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- Surface-mount package
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- -55 to 150°C Junction temperature range
通道数 1
针脚数 3
漏源极电阻 0.37 Ω
极性 N-Channel
耗散功率 560 mW
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 870 mA
上升时间 9.5 ns
输入电容Ciss 37pF @25VVds
额定功率Max 560 mW
下降时间 5.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 560mW Tc
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SOT-323-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PMF370XN,115 NXP 恩智浦 | 当前型号 | 当前型号 |
SI1304BDL-T1-E3 威世 | 功能相似 | PMF370XN,115和SI1304BDL-T1-E3的区别 |