VISHAY SUD50P04-09L-E3 场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
艾睿:
Trans MOSFET P-CH 40V 50A 3-Pin2+Tab DPAK
安富利:
Trans MOSFET P-CH 40V 50A 3-Pin2+Tab DPAK
富昌:
单 P 沟道 40 V 0.0094 Ohms 表面贴装 功率 Mosfet - TO-252
Verical:
Trans MOSFET P-CH 40V 50A 3-Pin2+Tab DPAK
Newark:
# VISHAY SUD50P04-09L-E3 MOSFET Transistor, P Channel, -50 A, -40 V, 0.0075 ohm, -10 V, -3 V
儒卓力:
**P-CH 40V 50A 10mOhm TO252-3 **
针脚数 3
漏源极电阻 0.0075 Ω
极性 P-Channel
耗散功率 136 W
漏源极电压Vds 40 V
上升时间 60 ns
输入电容Ciss 4800pF @25VVds
下降时间 140 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.73 mm
高度 2.38 mm
封装 TO-252
工作温度 -55℃ ~ 175℃
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99