FAIRCHILD SEMICONDUCTOR 2N7000BU 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
The is an advanced small-signal N-channel enhancement-mode MOSFET produced using "s proprietary high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
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- Fast switching times
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- Improved inductive ruggedness
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- Lower input capacitance
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- Extended safe operating area
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- Improved high-temperature reliability
额定电压DC 60.0 V
额定电流 200 mA
通道数 1
针脚数 3
漏源极电阻 5 Ω
极性 N-Channel
耗散功率 400 mW
阈值电压 3.9 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 200 mA
上升时间 10 ns
输入电容Ciss 50pF @25VVds
额定功率Max 400 mW
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 400mW Ta
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N7000BU Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
2N7000 飞兆/仙童 | 类似代替 | 2N7000BU和2N7000的区别 |
2N7000_D26Z 飞兆/仙童 | 类似代替 | 2N7000BU和2N7000_D26Z的区别 |