达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
Traditional transistors can produce low current gains. One of "s NPN Darlington transistors can provide you with the much higher values you need. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V|14000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V.
额定电压DC 40.0 V
额定电流 500 mA
极性 NPN
耗散功率 1.5 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 20000 @100mA, 5V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2N6427G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2N6427RLRAG 安森美 | 类似代替 | 2N6427G和2N6427RLRAG的区别 |
2N6427 安森美 | 类似代替 | 2N6427G和2N6427的区别 |
2N6427RLRA 安森美 | 类似代替 | 2N6427G和2N6427RLRA的区别 |