封装 TO-39-3
封装 TO-39-3
Mounting-Style Through Hole
Package-Case TO-39-3
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation 725 mW
Maximum-Operating-Temperature \+ 125 C
Minimum-Operating-Temperature \- 55 C
Vgs-Gate-Source-Voltage 20 V
Id-Continuous-Drain-Current 860 mA
Vds-Drain-Source-Breakdown-Voltage 90 V
Rds-On-Drain-Source-Resistance 4 Ohms
Transistor-Polarity N-Channel
Channel-Mode Enhancement