INFINEON BSC750N10NDGATMA1 晶体管, MOSFET, N沟道, 13 A, 100 V, 62 mohm, 10 V, 3 V
OptiMOS™2 功率 MOSFET 系列
Infineon 得捷:
MOSFET 2N-CH 100V 3.2A 8TDSON
欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSC750N10NDGATMA1, 13 A, Vds=100 V, 8引脚 TDSON封装
贸泽:
MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 13 A, 0.062 ohm, PG-TDSON, 表面安装
艾睿:
Use Infineon Technologies&s; BSC750N10NDGATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R
富昌:
BSC750N10ND 系列 100 V 75 mOhm N沟道 OptiMOS™2 功率 晶体管- PG-TDSON-8
TME:
Transistor: N-MOSFET; unipolar; 100V; 13A; 26W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC750N10NDGATMA1 MOSFET Transistor, N Channel, 13 A, 100 V, 62 mohm, 10 V, 3 V
额定功率 26 W
针脚数 8
漏源极电阻 0.062 Ω
极性 N-Channel
耗散功率 26 W
阈值电压 3 V
漏源极电压Vds 100 V
连续漏极电流Ids 3.2A
上升时间 4 ns
输入电容Ciss 540pF @50VVds
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TSDSON
长度 5.15 mm
宽度 5.9 mm
高度 1 mm
封装 PG-TSDSON
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, Power Management, 电机驱动与控制, Motor Drive & Control, Industrial, Class D audi, Uninterruptable power supplies UPS, 电源管理, Or-ing switches and circuit breakers in 48V systems, Isolated DC-DC converters telecom and datacom systems, Automotive, Audio, 音频, Synchronous rectification for AC-DC SMPS, 车用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17