BSC042NE7NS3GATMA1

INFINEON  BSC042NE7NS3GATMA1  晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 75V 19A/100A TDSON

立创商城:
N沟道 75V 100A 19A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC042NE7NS3GATMA1, 100 A, Vds=75 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3

e络盟:
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSC042NE7NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

安富利:
MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3

TME:
Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC042NE7NS3GATMA1  MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V

Win Source:
MOSFET N-CH 75V 100A TDSON-8