N沟道 60V 250mA
As an alternative to traditional transistors, the power MOSFET from Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 60.0 V
额定电流 250 mA
漏源极电阻 5 Ω
极性 N-Channel
耗散功率 300 mW
阈值电压 2 V
漏源极电压Vds 60 V
漏源击穿电压 80.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 250 mA
输入电容Ciss 50pF @10VVds
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BS870-7-F Diodes 美台 | 当前型号 | 当前型号 |
BS870-7 美台 | 类似代替 | BS870-7-F和BS870-7的区别 |
BS870 美台 | 功能相似 | BS870-7-F和BS870的区别 |